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BlueRocket/蓝箭电子 BRCS4606HSC SOP-8塑封封装互补增强模式MOS场效应管
Descriptions
BRCS4606HSC Complementary Enhancement MOSFET in a SOP-8 Plastic Package.
Features
● N-channel P-channel
● VDS(V)=30V VDS(V)=-30V
● ID=6.9A ID=-6.0A
● RDS(ON)<32mΩ(VGS=10V) RDS(ON)<70mΩ(VGS=-10V)
● RDS(ON)<40mΩ(VGS=4.5V) RDS(ON)<90mΩ(VGS=-4.5V)
● HF Product
Applications
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. And suitable for use as a load switch or in PWM applications.
Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: 30~33.7V
● Zero Gate Voltage Drain Current
VDS=-24V VGS=0V: 1.0μA
VDS=-24V VGS=0V TJ=55℃: 5.0μA
● Gate–Body Leakage: 100nA
● Gate Threshold Voltage: 1.1V 1.7V 2.4V
● Static Drain–Source On–Resistance
VGS=10V ID=6.9A: 21.6~32mΩ
VGS=4.5V ID=5.0A: 31.8~40mΩ
● Diode Forward Voltage: 0.78~1.0V
● Input Capacitance: 325pF
● Output Capacitance: 140pF
● Reverse Transfer Capacitance: 30pF
● Gate resistance: 4.6Ω
● Total Gate Charge Qg(10V): 5.2nC
● Total Gate Charge Qg(4.5V): 2.5nC
● Gate Source Charge: 0.8nC
● Gate Drain Charge: 1.3nC
● Turn–On Delay Time: 4.5ns
● Turn–On Rise Time: 2.5ns
● Turn–Off Delay Time: 14.5ns
● Turn–Off Fall Time: 3.5ns
BRCS4606HSC规格书（部分）
询价
