深圳市科瑞芯电子有限公司

GMT  G5016KD1U TDFN2X3-14 22+ 双超低通电阻负载开关，带控制通断

General Description
The G5016 is dual N-channel MOSFET power switch
designed for high-side load-switching applications, and
the device has a typical RDS(ON) of 16mΩ and the output
current is limited to 6A. Each switch is independently
controlled by an on/off input (EN1, EN2),
which is capable of interfacing directly with low-voltage
GPIO control signals.
In the G5016, a 250Ω on-chip load resistor is added
for quick output discharge (QOD) when the switch is
turned off. The rise time of the device is internally controlled
in order to avoid in-rush current and can be
adjusted using a ceramic capacitor on the CTx pins.
The G5016 is available in 14 pin TDFN package.

Features
Integrated Dual Channel Load Switch
Input Voltage Range: 0.8V to 5.5V
Dual Ultra-low ON-Resistance (16mΩ)
- RDS(on) = 17mΩ at VIN = 5V (VBIAS = 5V)
- RDS(on) = 16mΩ at VIN = 3.6V (VBIAS = 5V)
- RDS(on) = 16mΩ at VIN = 1.8V (VBIAS = 5V)
- RDS(on) = 15mΩ at VIN = 0.8V (VBIAS = 5V)
6A Continuous Switch Current per channel
Low Quiescent Current
- 65μA (Both Channel)
- 55μA (Single Channel)
Low Threshold Control Inputs
Adjustable Slew-rate Control
Quick Output Discharge Transistor
14 Pin TDFN Package with Thermal Pad
Applications
Notebooks / Netbooks
Tablet PCs
Consumer Electronics
Set-Top-Boxes
Industrial Systems
Telecom Systems