深圳市科瑞芯电子有限公司

BlueRocket/蓝箭电子 BRCS20N15DP N沟道TO-252塑封封装场效应管

Electrical Characteristics(Ta=25℃)

● Drain-Source Breakdown Voltage: 150~156V

● Zero Gate Voltage Drain Current: 1~5μA

● Gate-Body leakage current: ±100nA

● Gate Threshold Voltage: 2~4V

● Static Drain-Source On-Resistance:

VGS=10V, ID=10A: 59~90mΩ

VGS=7V, ID=10A: 62~110mΩ

● Diode Forward Voltage: 1V

● Input Capacitance: 1700pF

● Output Capacitance: 4.5pF

● Reverse Transfer Capacitance: 58pF

● Gate resistance: 3.4Ω

● Total Gate Charge: 15.5~22nC

● Total Gate Charge Qg(4.5V): 7~10nC

● Gate Source Charge Qgs: 4nC

● Gate Drain Charge Qgd: 1.2nC

● Turn-On Delay Time: 6.5ns

● Turn-On Rise Time: 5ns

● Turn-Off Delay Time: 23ns

● Turn-Off Fall Time: 2.5ns

● Body Diode Reverse Recovery Time: 37ns

● Body Diode Reverse Recovery Charge: 265nC

Applications

BRCS20N15DP suited for low voltage applications such as automotive, DC/DC Converters, high efficiency switching for power management in portable and battery operated products,and power management interface card for TV or Monitor.

BRCS20N15DP产品规格书（部分）