深圳市科瑞芯电子有限公司

BlueRocket/蓝箭电子 BRCS80N07BD N沟道TO-263塑封封装场效应管

Descriptions

N-CHANNEL MOSFET in a TO-263 Plastic Package.

Features

Low RDS(on),Low Gate Charge, Fast Switching,Halogen-free Product.

Applications

BRCS80N07BD Suited for AD-DC Power switch,DC-DC Power converter,High Voltage H-Bridge PWM Motor Drive.

Electrical Characteristics(Ta=25℃)

● Drain-Source Breakdown Voltage: 70V
● Zero Gate Voltage Drain Current
VDS=70V VGS=0V: 1μA
VDS=70V TJ=55℃: 5μA
● Gate-Body Leakage Current Forward: 100nA
● Gate Threshold Voltage: 2.0V 2.8V 4.0V
● Static Drain-Source On-Resistance: 5.8~7mΩ 
● Drain-Source Diode Forward Voltage: 1.4V
● Gate resistance: 1.25Ω
● Input Capacitance: 2180pF
● Output Capacitance: 614pF
● Reverse Transfer Capacitance: 110pF
● Total Gate Charge(10V): 53~75nC
● Total Gate Charge(4.5V): 22~31nC
● Gate Source Charge: 17~31nC
● Gate Drain Charge: 5nC
● Turn-On Delay Time: 18ns
● Turn-On Rise Time: 20ns
● Turn-Off Delay Time: 33ns
● Turn-Off Fall Time: 4ns
● Body Diode Reverse Recovery Time: 26ns
● Body Diode Reverse Recovery Charge: 125nC

BRCS80N07BD产品规格书（部分）