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BlueRocket/蓝箭电子 BRCS015N04SZC PDFN5×6封装N沟道场效应管
Descriptions
BRCS015N04SZC N-Channel MOSFET in a PDFN5×6 Plastic Package.
Features
● Low RDS(ON) to minimize conductive loss
● low Gate Charge for fast switching
● Low Thermal resistance
● HF Product
Applications
Battery Management
Absolute Maximum Ratings(Ta=25℃)
● Drain-Source Voltage: 40V
● Drain Current - Continuous: 170A
● Drain Current - Pulsed: 340A
● Gate-Source Voltage: ±20V
● Power Dissipation: 65W
● Single Pulse Avalanche Energy(L=0.5mH): 358mJ
● Avalanche Current(L=0.5mH): 32A
● Junction and Storage Temperature Range: -55 to 150℃
● Thermal resistance, junction - case: 1.9℃/W
● Thermal resistance, junction - ambient: 55℃/W
BRCS015N04SZC产品规格书
询价
