BlueRocket/蓝箭电子 BRCS060N03ZC PDFN5*6封装N沟道场效应管
Descriptions
BRCS060N03ZC N-Channel MOSFET in a PDFN5*6 Plastic Package.
Features
Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance.
Applications
Battery Management
Absolute Maximum Ratings(Ta=25℃)● Drain-Source Voltage: 30V
● Drain Current: 45A
● Drain Current - Pulsed: 135A
● Gate-Source Voltage: ±20V
● Power Dissipation: 28W
● Single Pulsed Avalanche Energy: 211mJ
● Avalanche Current: 23A
● Operating and Storage Temperature Range: -55 to 150℃
● Thermal resistance, junction - ambient
t ≤ 10s: 36℃/W
Steady-State: 64.8℃/W
● Thermal resistance, junction - case Steady-State: 4.5℃/W
BRCS060N03ZC产品规格书