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BlueRocket/蓝箭电子 BRCS3401MC SOT23-3塑封封装P道MOS场效应管
Descriptions
BRCS3401MC P- CHANNEL MOSFET in a SOT23-3 Plastic Package.
Features
● VDS (V) = -30V
● ID = -4.2 A (VGS = -10V)
● RDS(ON) < 60mΩ (VGS = -10V)
● RDS(ON) < 65mΩ (VGS = -4.5V)
● RDS(ON) < 120mΩ (VGS = -2.5V)
● Halogen free product
Applications
This device is suitable for use as a load switch or in PWM applications.
Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: -30V
● Zero Gate Voltage Drain Current
VDS=-24V VGS=0V: -1μA
VDS=-24V VGS=0V TJ=55℃: -5μA
● Gate–Body Leakage: ±0.1μA
● On–State Drain Current: -25 A
● Gate Threshold Voltage: -0.7V -1V -1.3V
● Static Drain–Source On–Resistance
RDS(on)(1): 52~60mΩ
RDS(on)(2): 5mΩ
RDS(on)(3): 60~65mΩ
RDS(on)(4): 75~120mΩ
● Forward Transconductance: 4~8S
● Drain–Source Diode Forward Voltage: -0.75~-1.0V
● Input Capacitance: 957pF
● Output Capacitance: 115pF
● Reverse Transfer Capacitance: 77pF
● Gate resistance: 6Ω
● Total Gate Charge: 9.4nC
● Gate Source Charge: 2nC
● Gate Drain Charge: 3nC
● Turn–On Delay Time: 6.3ns
● Turn–On Rise Time: 3.2ns
● Turn–Off Delay Time: 38.2ns
● Turn–Off Fall Time: 12ns
● Body Diode Reverse Recovery Time: 20.2ns
● Body Diode Reverse Recovery Charge: 11.2nC
BRCS3401MC规格书（部分）
