深圳市科瑞芯电子有限公司

BlueRocket/蓝箭电子 BRCS4443SC SOP-8塑封封装P沟道MOS场效应管

Descriptions

BRCS4443SC P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package.

Features

● VDS (V) = -40V
● ID = -6 A (VGS = -10V)
● RDS(ON) < 42mΩ (VGS = -10V)
● RDS(ON) < 63mΩ (VGS = -4.5V)

Applications

● Battery protection

● Load Switch

Absolute Maximum Ratings(Ta=25℃)
● Drain-Source Voltage: -40V
● Gate-Source Voltage: ±20V
● Continuous Drain Current (Ta=25°C): -6A
● Continuous Drain Current (Ta=70°C): -5A
● Pulsed Drain Current C: -40A
● Power Dissipation for Single OperationA (Ta=25℃): 2.5W
● Power Dissipation for Single OperationA (Ta=70℃): 1.2W
● Avalanche Current C: 20A
● Avalanche energy L=0.1mH C: 20mJ
● Power Dissipation B
Ta=25℃: 3.1W
Ta=70℃: 2W
● Junction and Storage Temperature Range: -55～150℃

BRCS4443SC规格书（部分）