BlueRocket/蓝箭电子 BRCS4953DMF SOT23-6塑封封装双P沟道MOS场效应管
Descriptions
BRCS4953DMF Dual P-Channel MOSFET in a SOT23-6 Plastic Package.
Features
● Super high dense cell design for low RDS(ON)
● Rugged and reliable
● HF product
Applications
● Power Management in Notebook computer
● Portable Equipment and Battery powered systems
Absolute Maximum Ratings(Ta=25℃)● Drain-Source Voltage: -20V
● Gate-Source Voltage: ±12V
● Continuous Drain Current: -3.0A
● Pulsed Drain Current: -12A
● Diode Continuous Forward Current: -2.0A
● Power Dissipation for Single Operation (Ta=25℃): 1.25W
● Power Dissipation for Single Operation (Ta=100℃): 0.5W
● Maximum Junction Temperature: 150℃
● Storage Temperature Range: -55~150℃
● Thermal Resistance-Junction to Ambient: 70℃/W
BRCS4953DMF规格书(部分)