LPSemi/微源半导体 LP7812B QFN-16 28V,高效率全集成TWS充电仓电源管理芯片
LP7812B极限值
◆ VIN to GND ------------------------------------------------------------------------ -0.3V to 28V
◆ Others to GND --------------------------------------------------------------------- -0.3V to 6.5V
◆ SW to GND (5ns) ------------------------------------------------------------------- -2V to 8.5V
◆ 芯片结温 (TJ) ------------------------------------------------------------------------ -40℃ to 125℃
◆ 环境温度 (TA) ------------------------------------------------------------------------ -40℃ to 85℃
◆ zui高焊接温度 (at leads, 10 sec) -----------------------------------------------------260℃
ESD等级
◆ HBM (Human Body Model) -------------------------------------------------------- 4kV
◆ CDM (Charged Device Model) ----------------------------------------------------- 500V
热阻信息
◆ θJA (Junction-to-Ambient 热阻) ----------------------------------------------------60℃/W
推荐工作条件
◆ 输入电压:4~6V
◆ 输入电流:1A
◆ 环境温度范围:-40~85°C
◆ 输入滤波电容: 1μF
◆ BAT引脚滤波电容:10μF
◆ PMID引脚滤波电容:10μF
LP7812B产品应用
◆ TWS充电仓
产品规格书(部分)