深圳市科瑞芯电子有限公司

Fet/东沅 FKBA3072C PRPAK5x6 单N沟道MOSFET

FKBA3072C Features
● Advanced Trench MOS Technology
● Low Gate Charge
● 100% EAS Guaranteed
● Green Device Available

Applications
● Power Management in Desktop Computer
● DC/DC Converters

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 30V
● Static Drain-Source On-Resistance
VGS=10V , ID=20A: 1.65~2.0mΩ
VGS=4.5V , ID=20A: 2.45~3.3mΩ
● Gate Threshold Voltage: 1.2~2.3V
● Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃: 1uA
VDS=24V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 40S
● Gate Resistance: 2.0Ω
● Total Gate Charge (10V): 51.5nC
● Total Gate Charge (4.5V): 26.1nC
● Gate Source Charge : 8nC
● Gate-Drain Charge: 10.6nC
● Turn-On Delay Time: 11.5ns
● Rise Time: 45.5ns
● Turn-Off Delay Time: 28.5ns
● Fall Time: 7.1ns
● Input Capacitance: 2859pF
● Output Capacitance: 1259pF
● Reverse Transfer Capacitance: 229pF

FKBA3072C产品规格书（部分）