深圳市科瑞芯电子有限公司

Fet/东沅 FKS0016 SOP8 100V N沟道快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 100V
● Temperature Coefficient Reference: 0.098V/℃
● Static Drain-Source On-Resistance: 
VGS=10V , ID=3A: 47mΩ
VGS=4.5V , ID=2A: 50mΩ
● Gate Threshold Voltage: 1.0~2.5V
● Temperature Coefficient: -5.52mV/℃
● Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃: 10uA
VDS=80V , VGS=0V , TJ=55℃: 100uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 6.2S
● Gate Resistance: 1.6Ω
● Total Gate Charge: 60nC
● Gate Source Charge: 9.2nC
● Gate-Drain Charge: 9.9nC
● Turn-On Delay Time: 10.8ns
● Rise Time: 27s
● Turn-Off Delay Time: 56ns
● Fall Time: 24ns
● Input Capacitance: 3848pF
● Output Capacitance: 137pF
● Reverse Transfer Capacitance: 82pF

Diode Characteristics
● Continuous Source Current: 3.6A
● Pulsed Source Current: 15A
● Diode Forward Voltage: 1.2V
● Reverse Recovery Time: 25nS
● Reverse Recovery Charge: 29nC

FKS0016产品规格书（部分）FKS0016封装