深圳市科瑞芯电子有限公司

Fet/东沅 FKBA20N15A PRPAK5x6 N沟道150V快速开关MOSFET

FKBA20N15A Features
● Low Ros(ON)
● Green Device Available
● 100% EAS Tested
● Advanced Trench MOS Technology

FKBA20N15A Applications
● Power Management in TV Converter
● DC/DC Converter

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 150V
● Static Drain-Source On-Resistance: 47~56mΩ
● Gate Threshold Voltage: 2~4V
● Drain-Source Leakage Current
VDS=120V , VGS=0V , TJ=25℃: 1uA
VDS=120V , VGS=0V , TJ=85℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 25S
● Total Gate Charge: 23nC
● Gate Source Charge: 5.8nC
● Gate-Drain Charge: 4.2nC
● Turn-On Delay Time: 16.2ns
● Rise Time: 18.6ns
● Turn-Off Delay Time: 28.5ns
● Fall Time: 6.5ns
● Input Capacitance: 1190pF
● Output Capacitance: 73pF
● Reverse Transfer Capacitance: 4pF

产品规格书（部分）