深圳市科瑞芯电子有限公司

Fet/东沅 FKBA3050 PRPAK5x6 N沟道30V快速开关MOSFET

FKBA3050 Absolute Maximum Ratings
● Drain- Source Vltage: 30V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: 75A
ID@Tc=100℃: 45A
● Pulsed Drain Current: 160A
● Pulse Avalanche Energy: 144.7mJ
● Avalanche Current: 53.8A
● Total Power Dissipation: 50W
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 30V
● Static Drain-Source On-Resistance
VGS=10V , ID=20A: 3~3.8mΩ
VGS=4.5V , ID=15A: 3.8~5.8mΩ
● Gate Threshold Voltage: -1.2~-2.5V
● Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃: 1uA
VDS=30V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 75S
● Total Gate Charge: 23.4nC
● Gate Source Charge: 11.4nC
● Gate-Drain Charge: 8.2nC
● Turn-On Delay Time: 12.6ns
● Rise Time: 9.9ns
● Turn-Off Delay Time: 55ns
● Fall Time: 5.6ns
● Input Capacitance: 2461pF
● Output Capacitance: 381pF
● Reverse Transfer Capacitance: 261pF

FKBA3050产品规格书（部分）