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Fet/东沅 FKBA3204 PRPAK5x6 双N沟道增强型MOSFET
Description
The FKBA3204 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.The FKBA3204 meet the RoHS and GreenProduct requirement, 100% EAS guaranteed withfull function reliability approved.
Features
● 100% EAS Guaranteed
● Green Device Available
● Super Low Gate Charge
● Excellent CdV/dt effect decline
● Advanced high cell density Trench technology
产品规格书（部分）
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