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Fet/东沅 FKBA4014 PRPAK5x6 N沟道40V快速开关MOSFET
Description
The FKBA4014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buckconverter applications.The FKBA4014 meet the RoHS and GreenProduct requirement, 100% EAS guaranteed withfull function reliability approved.
Features
● 100% EAS Guaranteed
● Green Device Available
● Super Low Gate Charge
● Excellent CdV/dt effect decline
● Advanced high cell density Trench technology
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 40V
● Temperature Coefficient Reference: 0.032V/℃
● Static Drain-Source On-Resistance
VGS=10V , ID=15A: 17mΩ
VGS=4.5V , ID=10A: 22mΩ
● Gate Threshold Voltage: 1.0~2.5V
● Temperature Coefficient: -4.8mV/℃
● Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=25℃: 1uA
VDS=32V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 34S
● Gate Resistance: 2.1Ω
● Total Gate Charge: 10nC
● Gate Source Charge: 2.55nC
● Gate-Drain Charge: 4.8nC
● Turn-On Delay Time: 2.8ns
● Rise Time: 12.8ns
● Turn-Off Delay Time: 21.2ns
● Fall Time: 6.4ns
● Input Capacitance: 1013pF
● Output Capacitance: 107pF
● Reverse Transfer Capacitance: 76pF
产品规格书（部分）
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