深圳市科瑞芯电子有限公司

Fet/东沅 FKBA4024A PRPAK5x6 N沟道40V快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 40V
● Static Drain-Source On-Resistance: 2.5~3.3mΩ
● Gate Threshold Voltage: 2~4V
● Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃: 1uA
VDS=48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 53S
● Gate Resistance: 0.8Ω
● Total Gate Charge: 65nC
● Gate Source Charge: 24nC
● Gate-Drain Charge: 21nC
● Turn-On Delay Time: 26ns
● Rise Time: 38ns
● Turn-Off Delay Time: 63ns
● Fall Time: 20ns
● Input Capacitance: 4711pF
● Output Capacitance: 869pF
● Reverse Transfer Capacitance: 367pF

FKBA4024A Diode Characteristics
● Continuous Source Current: 20A
● Diode Forward Voltage: 1.2V
● Reverse Recovery Time: 20.3nS
● Reverse Recovery Charge: 9.5nC

FKBA4024A产品规格书（部分）