深圳市科瑞芯电子有限公司

Fet/东沅 FKBA4070A PRPAK5x6 N沟道40V快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 40V
● Static Drain-Source On-Resistance: 1.4~1.8mΩ
● Gate Threshold Voltage: 2~4V
● Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=25℃: 1uA
VDS=32V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 53S
● Gate Resistance: 1.9Ω
● Total Gate Charge: 60nC
● Gate Source Charge: 14.7nC
● Gate-Drain Charge: 13.9nC
● Turn-On Delay Time: 11.4ns
● Rise Time: 41.6ns
● Turn-Off Delay Time: 42.8ns
● Fall Time: 27.2ns
● Input Capacitance: 3739pF
● Output Capacitance: 1267pF
● Reverse Transfer Capacitance: 106pF

FKBA4070A Diode Characteristics
● Continuous Source Current: 100A
● Diode Forward Voltage: 1.2V

FKBA4070A产品规格书（部分）