深圳市科瑞芯电子有限公司

Fet/东沅 FKBA4903 PRPAK5x6 N和P沟道快速开关MOSFET

N沟道Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 40V
● Static Drain-Source On-Resistance
VGS=10V , ID=12A: 30mΩ
VGS=4.5V , ID=10A: 50mΩ
● Gate Threshold Voltage: 1.0~2.5V
● Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=25℃: 1uA
VDS=32V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 8S
● Total Gate Charge: 5.5nC
● Gate Source Charge: 1.25nC
● Gate-Drain Charge: 2.5nC
● Turn-On Delay Time: 8.9ns
● Rise Time: 2.2ns
● Turn-Off Delay Time: 41ns
● Fall Time: 2.7ns
● Input Capacitance: 596pF
● Output Capacitance: 76pF
● Reverse Transfer Capacitance: 56pF

FKBA4903Diode Characteristics
● Continuous Source Current: 23A
● Pulsed Source Current: 
● Diode Forward Voltage: 1.2V

FKBA4903产品规格书（部分）