深圳市科瑞芯电子有限公司

Fet/东沅 FKBA6048 PRPAK5x6 N沟道60V快速开关MOSFET

FKBA6048 Features

● Advanced Trench MOS Technology

● Super Low Gate Charge
● Excellent CdV/dt effect decline
● 100% EAS Guaranteed
● Green Device Available

FKBA6048 Application
● Motor Control
● DC/DC Converter
● Synchronous rectifier applications

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 60V
● Static Drain-Source On-Resistance
VGS=10V , ID=20A: 3.0~3.6mΩ
VGS=4.5V , ID=15A: 4.4~5.4mΩ
● Gate Threshold Voltage: 1.2~2.3V
● Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃: 1uA
VDS=48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 65S
● Gate Resistance: 0.7Ω
● Total Gate Charge: 58nC
● Gate Source Charge: 16nC
● Gate-Drain Charge: 4nC
● Turn-On Delay Time: 18ns
● Rise Time: 8ns
● Turn-Off Delay Time: 50ns
● Fall Time: 10.8ns
● Input Capacitance: 3458pF
● Output Capacitance: 1522pF
● Reverse Transfer Capacitance: 22pF

产品规格书（部分）