深圳市科瑞芯电子有限公司

Fet/东沅 FKBB0903 PRPAK3x3 N和P沟道快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: ±100V
● Static Drain-Source On-Resistance
VGS=±10V , ID=±4A: 100, 220mΩ
VGS=±4.5V , ID=±3A: 125, 225mΩ
● Gate Threshold Voltage: 1.2~2.7V
● Drain-Source Leakage Current
VDS=±80V , VGS=0V , TJ=25℃: ±1uA
VDS=±80V , VGS=0V , TJ=55℃: ±30uA
● Gate- Source Leakage Current: ±100nA
● Gate Resistance: 3.5, 13Ω
● Total Gate Charge: 15nC
● Gate Source Charge: 3.2nC
● Gate-Drain Charge: 2.6nC
● Turn-On Delay Time: 8ns
● Rise Time: 12s
● Turn-Off Delay Time: 20ns
● Fall Time: 6ns
● Input Capacitance: 987 pF
● Output Capacitance: 38pF
● Reverse Transfer Capacitance: 26pF

FKBB0903产品规格书（部分）