深圳市科瑞芯电子有限公司

Fet/东沅 FKBB3046 PRPAK3x3 N沟道30V快速开关MOSFET

FKBB3046 Features

● Advanced Trench MOS Technology
● Low Gate Charge
● Low Ros/ON)
● 100% EAS Guaranteed
● Green Device Available

FKBB3046 Applications
● Power Management in Desktop Computer or DC/DC Converters
● lsolated DC/DC Converters in Telecom and Industrial

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 30V
● Static Drain-Source On-Resistance
VGS=10V , ID=20A: 3~3.8mΩ
VGS=4.5V , ID=15A: 3.8~5.8mΩ
● Gate Threshold Voltage: 1.0~2.5V
● Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃: 1uA
VDS=30V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 75S
● Total Gate Charge: 23.4nC
● Gate Source Charge: 11.4nC
● Gate-Drain Charge: 8.2nC
● Turn-On Delay Time: 12.6ns
● Rise Time: 9.6s
● Turn-Off Delay Time: 55ns
● Fall Time: 5.6ns
● Input Capacitance: 2461pF
● Output Capacitance: 383pF
● Reverse Transfer Capacitance: 261pF

产品规格书（部分）