深圳市科瑞芯电子有限公司

Fet/东沅 FKBB3056 PRPAK3x3 N沟道30V快速开关MOSFET

FKBB3056 Absolute Maximum Ratings

● Drain- Source Vltage: 30V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: 35A
ID@TC=100℃: 32A
● Pulsed Drain Current: 120A
● Single Pulse Avalanche Energy: 80mJ
● Avalanche Current: 40A
● Total Power Dissipation: 27W  
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 30V
● Static Drain-Source On-Resistance
VGS=10V , ID=20A: 3.2~3.9mΩ
VGS=4.5V , ID=15A: 4.9~6.1mΩ
● Gate Threshold Voltage: 1.2~2.2V
● Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃: 1uA
VDS=30V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 75S
● Gate Resistance: 0.7Ω 1.65Ω 2.6Ω
● Total Gate Charge: 14.7nC
● Gate Source Charge: 5.8nC
● Gate-Drain Charge: 3.5nC
● Turn-On Delay Time: 7.5ns
● Rise Time: 20.2s
● Turn-Off Delay Time: 21.6ns
● Fall Time: 4.4ns
● Input Capacitance: 1476pF
● Output Capacitance: 556pF
● Reverse Transfer Capacitance: 70pF

FKBB3056产品规格书（部分）