深圳市科瑞芯电子有限公司

Fet/东沅 FKBB3060 PRPAK3x3 N沟道30V快速开关MOSFET

FKBB3060 Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 30V
● Static Drain-Source On-Resistance
VGS=10V , ID=12A : 8~9.8mΩ
VGS=4.5V , ID=12A: 12~15.8mΩ
● Gate Threshold Voltage: 1.3~2.3V
● Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃: 1uA
VDS=30V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 45S
● Gate Resistance: 1Ω 3Ω 5Ω
● Total Gate Charge: 4.5nC
● Gate Source Charge: 2.4nC
● Gate-Drain Charge: 1.6nC
● Turn-On Delay Time: 5ns
● Rise Time: 3.7s
● Turn-Off Delay Time: 18.5ns
● Fall Time: 3.2ns
● Input Capacitance: 562pF
● Output Capacitance: 274pF
● Reverse Transfer Capacitance: 28pF

FKBB3060 Diode Characteristics
● Continuous Source Current: 12A
● Diode Forward Voltage: 1V

产品规格书（部分）