深圳市科瑞芯电子有限公司

Fet/东沅 FKBB4016 PRPAK3x3 N沟道40V快速开关MOSFET

FKBB4016 Absolute Maximum Ratings

● Drain- Source Vltage: 40V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: 40A
ID@TC=100℃: 31A
● Pulsed Drain Current: 140A
● Single Pulse Avalanche Energy: 101mJ
● Avalanche Current: 45A
● Total Power Dissipation: 36.7W
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 40V
● Static Drain-Source On-Resistance
VGS=10V , ID=10A: 5~6.5mΩ
VGS=4.5V , ID=5A: 6.5~9mΩ
● Gate Threshold Voltage: 1.0~2.5V
● Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=25℃: 1uA
VDS=32V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 27S
● Total Gate Charge: 20nC
● Gate Source Charge: 5.8nC
● Gate-Drain Charge: 9.5nC
● Turn-On Delay Time: 15.2ns
● Rise Time: 8.8s
● Turn-Off Delay Time: 74ns
● Fall Time: 7ns
● Input Capacitance: 2354pF
● Output Capacitance: 215pF
● Reverse Transfer Capacitance: 175pF

FKBB4016产品规格书（部分）