深圳市科瑞芯电子有限公司

Fet/东沅 FKBB6056 PRPAK3x3 N沟道60V快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 60V
● Static Drain-Source On-Resistance
VGS=10V , ID=15A: 7.0~8.5mΩ
VGS=4.5V , ID=15A: 10.5~12.5mΩ
● Gate Threshold Voltage: 1.2~2.3V
● Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃: 1uA
VDS=48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Gate Resistance: 1.3Ω
● Total Gate Charge: 15nC
● Gate Source Charge: 3.5nC
● Gate-Drain Charge: 4.2nC
● Turn-On Delay Time: 7ns
● Rise Time: 4.5s
● Turn-Off Delay Time: 26ns
● Fall Time: 5ns
● Input Capacitance: 1270pF
● Output Capacitance: 479pF
● Reverse Transfer Capacitance: 40pF

FKBB6056 Diode Characteristics
● Continuous Source Current: 30A
● Diode Forward Voltage: 1.2V
● Reverse Recovery Time: 22nS
● Qrr Reverse Recovery Charge: 72nC

FKBB6056产品规格书（部分）