深圳市科瑞芯电子有限公司

Fet/东沅 FKBB6903 PRPAK3x3 N和P沟道快速开关MOSFET

FKBB6903 Electrical Characteristics

● Drain- Source Breakdown Voltage: ±60V
● Static Drain-Source On-Resistance
VGS=10V , ID=5A: 38~50mΩ
VGS=4.5V , ID=4A: 45~70mΩ
● Gate Threshold Voltage: 1.0~2.5V 
● Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃: 1uA
VDS=48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 28S
● Gate Resistance: 2.8Ω
● Total Gate Charge: 19nC
● Gate Source Charge: 2.6nC
● Gate-Drain Charge: 4.1nC
● Turn-On Delay Time: 3ns
● Rise Time: 34ns
● Turn-Off Delay Time: 23ns
● Fall Time: 6ns
● Input Capacitance: 1027pF
● Output Capacitance: 65pF
● Reverse Transfer Capacitance: 46pF

FKBB6903 Diode Characteristics
● Continuous Source Current: 2.5A
● Diode Forward Voltage: 1.2V

产品规格书（部分）