深圳市科瑞芯电子有限公司

Fet/东沅 FKBB6113 PRPAK3x3 P沟道60V快速开关MOSFET

FKBB6113 Absolute Maximum Ratings

● Drain- Source Vltage: -60V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: -13A
ID@TC=100℃: -8.3A
ID@TA=25℃: -3.3A
ID@TA=70℃: -2.7A
● Pulsed Drain Current: -26A
● Single Pulse Avalanche Energy: 29.8mJ
● Avalanche Current: 24.4A
● Total Power Dissipation
PD@TC=25℃: 31.3W
PD@TA=25℃: 2W
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

FKBB6113 Electrical Characteristics
● Drain- Source Breakdown Voltage: -60V
● Static Drain-Source On-Resistance
VGS=-10V , ID=-10A: 90mΩ
VGS=-4.5V , ID=-5A: 132mΩ
● Gate Threshold Voltage: -1.0~-2.5V
● Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=25℃: 1uA
VDS=-48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 8.7S
● Gate Resistance: 15Ω
● Total Gate Charge: 11.8nC
● Gate Source Charge: 1.9nC
● Gate-Drain Charge: 6.5nC
● Turn-On Delay Time: 8.8ns
● Rise Time: 19.6s
● Turn-Off Delay Time: 47.2ns
● Fall Time: 9.6ns
● Input Capacitance: 1080pF
● Output Capacitance: 73pF
● Reverse Transfer Capacitance: 50pF

产品规格书（部分）