深圳市科瑞芯电子有限公司

Fet/东沅 FKBA6901 PRPAK5x6 N和P沟道60V快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: ±60V
● Static Drain-Source On-Resistance
VGS=±10V , ID=154A: 32mΩ
VGS=±4.5V , ID=10A: 38mΩ
● Gate Threshold Voltage: ±1.2~±2.5V
● Drain-Source Leakage Current
VDS=±48V , VGS=0V , TJ=25℃: 1uA
VDS=±48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 17S
● Gate Resistance: 3.2Ω
● Total Gate Charge: 12.56nC
● Gate Source Charge: 3.24nC
● Gate-Drain Charge: 6.31nC
● Turn-On Delay Time: 8ns
● Rise Time: 14.2s
● Turn-Off Delay Time: 24.4ns
● Fall Time: 4.6ns
● Input Capacitance: 1378pF
● Output Capacitance: 86pF
● Reverse Transfer Capacitance: 64pF

FKBA6901 Diode Characteristics
● Continuous Source Current: ±23A
● Diode Forward Voltage: ±1.2V

FKBA6901产品规格书（部分）